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| SI4832DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.018 @ VGS = 10 V 0.028 @ VGS = 4.5 V ID (A) 9 7.3 SCHOTTKY PRODUCT SUMMARY VDS (V) 30 VSD (V) Diode Forward Voltage 0.53 V @ 3.0 A IF (A) 4.0 D SO-8 S S S G 1 2 3 4 Top View 8 7 6 5 D Ordering Information: D D D N-Channel MOSFET S SI4832DY SI4832DY-T1 (with Tape and Reel) Schottky Diode G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150_C) (MOSFET)a, b Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)a, b Average Foward Current (Schottky) Pulsed Foward Current (Schottky) Maximum Power Dissipation (MOSFET)a b Maximum Power Dissipation (Schottky)a, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C TJ, Tstg PD TA = 25_C TA = 70_C VDS VGS ID IDM IS IF IFM 2.5 1.6 2.0 1.3 - 55 to 150 2.1 4.0 50 1.4 0.9 1.2 0.8 - 55 to 150 _C W 9 7.5 50 1.2 2.3 Symbol Limit 10 sec 30 30 "20 6.9 5.6 Steady State Unit V A THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambient (t v 10 sec)a ti t A bi t ) Device MOSFET Schottky MOSFET Symbol Typical 40 50 Maximum 50 60 90 100 Unit RthJA 70 80 _C/W Maximum Junction to Ambient (t = steady state)a Junction-to-Ambient Notes a. Surface Mounted on FR4 Board. b. t v 10 sec. Schottky For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 71774 S-31062--Rev. F, 26-May-03 www.vishay.com 1 SI4832DY Vishay Siliconix MOSFET + SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Current (MOSFET + Schottky) On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Schottky Diode Forward Voltagea IDSS VDS = 30 V, VGS = 0 V, TJ = 100_C VDS = 30 V, VGS = 0 V, TJ = 125_C ID(on) rDS(on) gfs VSD VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 9 A VGS = 4.5 V, ID = 7.3 A VDS = 15 V, ID = 9 A IS = 3.0 A, VGS = 0 V IS = 3.0 A, VGS = 0 V, TJ = 125_C 20 0.012 0.019 23 0.493 0.40 0.53 0.47 V 0.018 0.028 W S 0.007 1.5 6.5 1 "100 0.100 10 20 A mA V nA Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 3.0 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W 0.2 VDS = 15 V, VGS = 5 V, ID = 9 A 13 4 5.6 1.0 16 10 35 13 40 2.4 25 20 50 20 70 ns W 24 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 71774 S-31062--Rev. F, 26-May-03 SI4832DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 VGS = 10 thru 5 V 40 I D - Drain Current (A) 4V 30 I D - Drain Current (A) 40 50 Transfer Characteristics 30 20 20 TC = 125_C 10 10 3V 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) 25_C - 55_C 0 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.10 1800 Capacitance r DS(on) - On-Resistance ( W ) C - Capacitance (pF) 0.08 1500 Ciss 1200 0.06 900 Coss 600 Crss 0.04 VGS = 4.5 V 0.02 VGS = 10 V 300 0.00 0 10 20 30 40 50 0 0 5 10 15 20 25 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 9 A 1.6 On-Resistance vs. Junction Temperature 8 r DS(on) - On-Resistance ( W) (Normalized) 1.4 VGS = 10 V ID = 9 A 6 1.2 4 1.0 2 0.8 0 0 5 10 15 20 25 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 71774 S-31062--Rev. F, 26-May-03 www.vishay.com 3 SI4832DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 50 0.10 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) 0.08 I S - Source Current (A) 10 TJ = 150_C TJ = 25_C 0.06 ID = 9.0 A 1 0.04 0.02 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Reverse Current (Schottky) 30 10 I R - Reverse Current (mA) 40 1 Power (W) 30 V 0.1 10 V 0.01 20 V 0.001 30 50 Single Pulse Power (MOSFET) 20 10 0.0001 0 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 100 600 TJ - Junction Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient (MOSFET) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 70_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted PDM 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (sec) 100 600 www.vishay.com 4 Document Number: 71774 S-31062--Rev. F, 26-May-03 SI4832DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient (Schottky) 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 80_C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 4. Surface Mounted 10 30 Square Wave Pulse Duration (sec) Document Number: 71774 S-31062--Rev. F, 26-May-03 www.vishay.com 5 |
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